利用直流反应磁控溅射的方法和后退火技术在石英衬底上制备了Zn_(1-x)Cd_xO(x=0.5)薄膜.利用XRD、XPS、TEM、Absorption及PL等详细地研究了退火温度对薄膜的结构和光学性能的影响.结果表明:原生未退火的Zn_(1-x)Cd_xO薄膜具有纯ZnO的六角纤锌矿结构并且在(002)晶面方向上择优生长;当退火温度(Ta)从300℃增加到600℃时,观察到薄膜中出现了CdO杂相;而且,随着Ta的增加,Zn_(1-x)Cd_xO薄膜的光学带隙由2.08 e V增加至3.14 e V;相应地,近带边发光峰的峰位由588 nm减小到403 nm.
利用直流反应磁控溅射的方法和后退火技术在石英衬底上制备不同Cd含量的Zn_（1-x）Cd_xO（0≤x≤1）薄膜.利用XRD、XPS、TEM、Absorption及Hall等详细地对薄膜的结构、光学及电学性能进行了研究.研究发现：当x=0~0.2时,Zn_（1-x）Cd_xO薄膜为沿（002）方向择优生长的六角相结构;当x=0.5时,合金薄膜出现了六角相和立方相共存现象;当x≥0.8时,合金薄膜为沿（200）方向择优生长的立方相结构.结构为六角相时,合金薄膜的带隙从x=0时的3.25 e V减小到x=0.2时的2.75 e V;结构为立方相时,薄膜的带隙从x=0.8时的2.52 e V减小到x=1时的2.42 e V,带隙的变化很小.另外,霍尔测量结果表明,Cd含量对Zn_（1-x）Cd_xO薄膜的电学性质影响很大.
Based on transmission theory, a 17 x 17 polymer arrayed waveguide grating （AWG） multiplexer para meter optimization is performed, and the influence of the fabrication results on the transmission characteristics are analyzed. In this paper, we mainly discuss three of the main errors in the fabrication of polymer AWG devices. One is 3n 1, which is caused by the tuning of the core refractive index n 1, the second is 8b, which results from the rotating-coating of the core thickness b, and the other is the non-ideal core cross-section, which is caused by steam redissolution. The effects of the above fabrication errors on the transmission characteristics of the AWG device are investigated, and compensation techniques are proposed. By comparing the theoretical simulation and experimental results, the shift in the transmission spectrum is reduced by 0.028 nm, the 3 dB bandwidth is increased by about 0.036 nm, the insertion loss is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 1.5 dB.
