A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs' emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.
The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.
A monolithically integrated optical receiver,including the photodetector,has been realized in Chartered 0.35 μm EEPROM CMOS technology for 850 nm optical communication.The optical receiver consists of a differential photodetector,a differential transimpedance amplifier,three limiting amplifiers and an output circuit.The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth,and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10 -9.The chip dissipates 60 mW under a single 3.3 V supply.
A high-bandwidth,high-sensitivity fully differential optoelectronic integrated receiver is implemented in a chartered 3.3V standard 0.35μm analog CMOS process. To convert the incident light into a pair of fully differential photo-currents,a novel fully differential photodetector is proposed,which is composed of two completely identical photodiodes. The mea-surement results show that the receiver achieves a 1.11GHz 3dB bandwidth and a -13dBm sensitivity for a 10-12 bit error at 1.5Gb/s data rate under illumination by 850 nm incident lights.
YU Chang-liang MAO Lu-hong XIAO Xin-dong XIE Sheng ZHANG Shi-lin
