AlN films with preferred c-axis orientation are deposited on Si substrates using the radio frequency(RF) magnetron sputtering method.The post-processing is carried out under the cooling conditions including high vacuum,low vacuum under deposition gas ambient and low vacuum under dynamic N2 ambient.Structures and morphologies of the films are analyzed by X-ray diffraction(XRD) and atomic force microscopy(AFM).The hardness and Young's modulus are investigated by the nanoindenter.The experimental results indicate that the(100) and(110) peak intensities decrease in the XRD spectra and the root-mean-square of roughness(Rrms) of the film decreases gradually with the increase of the cooling rate.The maximum values of the hardness and Young modulus are obtained by cooling in low vacuum under deposition gas ambient.The reason for orientation variation of the films is explained from the perspective of the Al-N bond formation.
Nitrogen-doped diamond films have been synthesized by EA-CVD (electron assisted chemical vapor deposition) technique. The quality and nitrogen impurity states of the diamond films are characterized by SEM,raman spectroscopy,XPS and EPR spectroscopy,respectively. The results show that the morphology changes from well-defined facets to cauliflower-like structures,the content of amorphous carbon increases and the quality drops with increasing the nitrogen flow rate. Furthermore,in the films,it can be observed that nitrogen impurity exists in the forms of Ns0,[N-V]0 and [N-V]-1. The contents of [N-V]0 and [N-V]-1 are lower when the nitrogen flow rate is relatively high,and the concentration of Ns0 varies from 15 ppm to 483 ppm.
