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A fast transient response low dropout regulator with current control methodology
2011年
A transient performance optimized CCL-LDO regulator is proposed.In the CCL-LDO,the control method of the charge pump phase-locked loop is adopted.A current control loop has the feedback signal and reference current to be compared,and then a loop filter generates the gate voltage of the power MOSFET by integrating the error current.The CCL-LDO has the optimized damping coefficient and natural resonant frequency, while its output voltage can be sub-l-V and is not restricted by the reference voltage.With a 1μF decoupling capacitor,the experimental results based on a 0.13μm CMOS process show that the output voltage is 1.0 V;when the workload changes from 100μA to 100 mA transiently,the stable dropout is 4.25 mV,the settling time is 8.2μs and the undershoot is 5.11 mV;when the workload changes from 100 mA to 100μA transiently,the stable dropout is 4.25 mV,the settling time is 23.3μs and the overshoot is 6.21 mV.The PSRR value is more than -95 dB.Most of the attributes of the CCL-LDO are improved rapidly with a FOM value of 0.0097.
马卓郭阳段志奎谢伦国陈吉华余金山
关键词:瞬态响应低压差稳压器LDO稳压器功率MOSFETCMOS工艺
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