H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.
We demonstrate a novel SOI-based photonic crystal（PC） double-heterostructure slot waveguide microcavity constructed by cascading three PC slot waveguides with different slot widths,and simulate the luminescence enhancement of sol-gel Er-doped SiO2 filled in the microcavity by finite-difference time-domain（FDTD） method.The calculated results indicate that a unique sharp resonant peak dominates in the spectrum at the expected telecommunication wavelength of 1.5509 mm,with very high normalized peak intensity of ~108.The electromagnetic field of the resonant mode exhibits the strongest in the microcavity,and decays rapidly to zero along both sides,which means that the resonant mode field is well confined in the microcavity.The simulation results fully verify the enhancement of luminescence by PC double-heterostructure slot waveguide microcavity theoretically,which is a promising way to realize the high-efficiency luminescence of Si-based materials.
