Considering the toxicity problem of lead-based perovskite quantum dots(PQDs),the lead-free Cs_(3)Bi_(2)Br_(g)PQDs has been recognized as one of the promising candidates.However,the low photoluminescence quantum yields(PLQYs)hinder its practical application in optoelectronic devices.Here,w e successfully prepared Sm^(3+)ions doped Cs_(3)Bi_(2)Br_(g)PQDs with effective white light-emission by modified ligandassisted recrystallization method.The realization of white light-emission is attributed to the broadband blue emission of excitons and the red emission(^(4)G_(5/2)-^(6)HJ(J=5/2,7/2,9/2))of Sm^(3+)ions for Sm^(3+)ions doped Cs_(3)Bi_(2)Br_(g)PQDs.More importantly,compared with the undoped Cs_(3)Bi_(2)Br_(g)PQDs,the PLQYs of Sm^(3+)ions doped Cs_(3)Bi_(2)Br_(g)PQDs are improved from 10.9%to 20.8%,and the anti-water stability is also obviously improved.Finally,the Sm^(3+)ions doped PQDs based white light-emitting diodes(LEDs)with luminous efficiency of 12.6 lm/W were explored,which indicates that there is a potential prospect of lead-free PQDs in white light lighting application.
Yongsheng ZhuJinyang ZhuHaizhen SongJinshu HuangZhiwen LuGencai Pan
The geometries, stabilities, and electronic properties of FSin(n = 1 ~ 12) clusters are systematically investigated by using first-principles calculations based on the hybrid density-functional theory at the B3LYP/6-311G level. The geometries are found to undergo a structural change from two-dimensional to three-dimensional structure when the cluster size n equals 3. On the basis of the obtained lowest-energy geometries, the size dependencies of cluster properties, such as averaged binding energy, fragmentation energy, second-order energy difference, HOMO–LUMO(highest occupied molecular orbital–lowest unoccupied molecular orbital) gap and chemical hardness, are discussed. In addition, natural population analysis indicates that the F atom in the most stable FSincluster is recorded as being negative and the charges always transfer from Si atoms to the F atom in the FSinclusters.
First principles calculations are preformed to systematically investigate the electronic structures, elastic and thermodynamic properties of the monoclinic and orthorhombic phases of Si C2N4 under pressure. The calculated structural parameters and elastic moduli are in good agreement with the available theoretical values at zero pressure. The elastic constants of the two phases under pressure are calculated by stress–strain method. It is found that both phases satisfy the mechanical stability criteria within 60 GPa. With the increase of pressure, the degree of the anisotropy decreases rapidly in the monoclinic phase, whereas it remains almost constant in the orthorhombic phase. Furthermore, using the hybrid density-functional theory, the monoclinic and orthorhombic phases are found to be wide band-gap semiconductors with band gaps of about 2.85 e V and 3.21 e V, respectively. The elastic moduli, ductile or brittle behaviors, compressional and shear wave velocities as well as Debye temperatures as a function of pressure in both phases are also investigated in detail.
