CoSb3 nanowire arrays, preferred orientation of [510], were fabricated by electrodeposition of Co2+ and Sb3+ into anodic aluminum oxide (AAO) templates. The morphologies, structure, and composition of the as-synthesized sample have been performed using X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and energy-dispersive X-ray spectroscopy (EDS). Based on the previous investigation on CoSb3 nanowire arrays orientated along [420], the formation mechanism for different preferential orientation nanowire arrays was discussed.
A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiated Czochralski (CZ) silicon. The effect of RTP conditions on bulk microdefects (BMDs) and denuded zone (DZ) was investigated. Fourier transform infrared absorption spectrometer (FTIR) was used to measure the concentration of interstitial oxygen ([Oi]). Bulk microdefects were observed by optical microscope. The results show that, according to the variation of [Oi], it is found that RTP doesn’t change the processes of oxygen precipitation in fast neutron irradiated Czochralski silicon. Perfect denuded zone, dense oxygen precipitates and defects form in the bulk of irradiated samples. With increasing temperature of RTP, the width of denuded zone decreases. Increasing RTP cooling rate, the density of Bulk microdefects increases. DZ forms in the sample that annealed in nitrogen atmosphere.
