In order to improve the thermoelectric properties, hot-pressing sintering andultra high pressure sintering methods were adopted to fabricate BiSb_x. The phase and crystalstructures were determined by X-ray diffraction analysis (XRD). The thermoelectric properties weremeasured at 303 K along the direction parallel to the pressing direction. The electric conductivityof the samples was measured at 303 K by the four-probe technique. To measure the Seebeckcoefficient, heat was applied to the samples placed between two Cu discs. The thermoelectricelectromotive force (E) was measured upon applying small temperature differences (DELTA T<2 deg C)between the both ends of the samples. The Seebeck coefficient of the samples was determined from thevalue of E/DELTA T. The results indicate that the thermoelectric properties of the samplesfabricated by UHPS (ultra high pressure sintering) method are much higher than that by HPS (hotpressing sintering) method and have the highest values at x=0.7.
Guiying Xu, Zhangjian Zhou, Sitong Niu, and Jianqiang LiuLaboratory of Special Ceramics and Powder Metallurgy, University of Science and Technology Beijing, Beijing 100083, China
In order to find more suitable materials as barriers and to improve the thermoelectric properties, p-type (Bi1-xSbx) 2Te3 (x = 0.85, 0.9) two segments compositionally graded thermoelectric materials (CGTM) with different barriers were fabricated by conventional hot pressure method. Metals Fe, Co, Cu and Al were used as barriers between two segments. The effects of different barriers on thermoelectric properties of CGTM were investigated. The results show that metal Fe is more stable and suitable as the barrier.
