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国家高技术研究发展计划(2007AA01Z2b2)

作品数:6 被引量:4H指数:1
相关作者:席胜黄鲁席天佐更多>>
相关机构:中国航空工业集团公司中国科学技术大学更多>>
发文基金:国家高技术研究发展计划更多>>
相关领域:电子电信电气工程自动化与计算机技术更多>>

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6 条 记 录,以下是 1-6
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A 1.8V LDO voltage regulator with foldback current limit and thermal protection被引量:1
2009年
This paper introduces the design of a l.8 V low dropout voltage regulator (LDO) and a foldback current limit circuit which limits the output current to 3 mA when load over-current occurs. The LDO was implemented in a 0.18 μm CMOS technology. The measured result reveals that the LDO s power supply rejection (PSR) is about -58dB and -54dB at 20Hz and 1kHz respectively,the response time is 4μs and the quiescent currentis 20μA. The designed LDO regulator can work with a supply voltage down to 2.0 V with a drop-out voltage of 200 mV at a maximum load current of 240 mA.
刘志明傅忠谦黄鲁席天佐
关键词:LDO
A 3-5 GHz BPSK transmitter for IR-UWB in 0.18μm CMOS被引量:1
2010年
This paper presents a transmitter IC with BPSK modulation for an ultra-wide band system.It is based on up-conversion with a high linearity passive mixer.Unlike the traditional BPSK modulation scheme,the local oscillator (LO) is modulated by the baseband data instead of the pulse.The chip is designed and fabricated by standard 0.18μm CMOS technology.The transmitter achieves a high data rate up to 400 Mbps.The amplitude of the pulse can be adjusted by the amplitude of the LO and the bias current of the driver amplifier.The maximum peak-to-peak amplitude of the pulse is 600 mV.It consumes only 20.3 mA current with a supply voltage of 1.8 V when transmitting a pulse at the maximum data rate.The energy efficiency is 91.4 pJ/pulse.The die area is 1.4×1.4 mm^2.
付德龙黄鲁蔡力林福江
关键词:TRANSMITTERBPSKIR-UWB
A low power high gain UWB LNA in 0.18-μm CMOS被引量:2
2009年
A low power high gain differential UWB low noise amplifier (LNA) operating at 3-5 GHz is presented. A common gate input stage is used for wideband input matching; capacitor cross coupling (CCC) and current reuse techniques are combined to achieve high gain under low power consumption. The prototypes fabricated in 0.18-μm CMOS achieve a peak power gain of 17.5 dB with a -3 dB bandwidth of 2.8-5 GHz, a measured minimum noise figure (NF) of 3.35 dB and -12.6 dBm input-referred compression point at 5 GHz, while drawing 4,4 mA from a 1.8 V supply. The peak power gain is 14 dB under a 4.5 mW power consumption (3 mA from a 1.5 V supply). The proposed differential LNA occupies an area of 1,01 mm^2 including test pads.
蔡力傅忠谦黄鲁
关键词:UWBLNA
单芯片极窄微弱脉冲检测系统设计
2010年
采用0.18μm CMOS工艺设计了一款单芯片集成极窄微弱脉冲检测系统,该芯片包括输入匹配、放大器、脉冲展宽器、驱动及带隙基准电压电流产生电路。为提高检测系统灵敏度,文章采用了多级放大器级联以及有源电感。测试表明该芯片可以检测1ns脉宽10mV的脉冲,输出数字信号,可以应用于OOK系统接收机,接收超过40M数据率的清晰视频。该芯片低功耗、低成本,具有研究和实践推广价值。
席天佐黄鲁席胜
关键词:脉冲放大器有源电感
A 3-5GHz CMOS UWB power amplifier with±8ps group delay ripple
2010年
A differential power amplifier (PA), designed using the linear-phase filter model, for a BPSK modulated ultra-wideband (UWB) system operating in the 3-5 GHz frequency range is presented. The proposed PA was fabricated using 0.18μm SMIC CMOS technology. To achieve sufficient linearity and efficiency, this PA operates in the class-AB region, delivering an output power of 8.5 dBm at an input-1 dB compression point of-0.5 dBm. It consumes 28.8 mW, realizing a fiat gain of 9.11± 0.39 dB and a very low group delay ripple of ±8 ps across the whole band of operation.
席天佐黄鲁郑重冯立松
关键词:PAUWBLINEARITY
A 4 GHz quadrature output fractional-N frequency synthesizer for an IR-UWB transceiver
2010年
This paper describes a 4 GHz fractional-N frequency synthesizer for a 3.1 to 5 GHz IR-UWB transceiver. Designed in a 0.18μm mixed-signal & RF 1P6M CMOS process, the operating range of the synthesizer is 3.74 to 4.44 GHz. By using an 18-bit third-order ∑-△ modulator, the synthesizer achieves a frequency resolution of 15 Hz when the reference frequency is 20 MHz. The measured amplitude mismatch and phase error between I and Q signals are less than 0.1 dB and 0.8° respectively. The measured phase noise is -116 dBc/Hz at 3 MHz offset for a 4 GHz output. Measured spurious tones are lower than -60 dBc. The settling time is within 80°s. The core circuit conupSigmaes only 38.2 mW from a 1.8 V power supply.
郭诗塔黄鲁袁海泉冯立松刘志明
关键词:QVCO
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