采用美国宾州大学开发的AMPS(Analysis of Microelectronic and Photonic Structures)软件模拟了p/i界面缺陷态密度(Npt/i)和非晶孵化层厚度(d)对pin型氢化微晶硅(μc-Si∶H)薄膜太阳电池性能的影响。结果表明:随着Ntp/i的增大,电池的开路电压Voc和填充因子FF单调减小,短路电流Jsc基本不变;随着d的增大,Jsc和FF单调减小,Voc反而增大;Ntp/i和d值的增大均会导致电池光电转换效率η下降。通过对电池内部的电场及能带的分析,对上述模拟结果进行了解释。
We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.
