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国家自然科学基金(ZR2009GQ011)

作品数:3 被引量:2H指数:1
相关作者:袁长坤张化福刘汉法类成新更多>>
相关机构:山东理工大学更多>>
发文基金:国家自然科学基金更多>>
相关领域:电子电信化学工程理学更多>>

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Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering被引量:2
2011年
Tungsten-doped zinc oxide(ZnO:W) films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^(-4)Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.
张化福杨书刚刘汉法袁长坤
直流反应磁控溅射法制备ZnO:Zr透明导电薄膜(英文)
2012年
以Zn∶Zr为靶材,利用直流反应磁控溅射法制备了ZnO∶Zr透明导电薄薄膜。研究了沉积压强对ZnO∶Zr薄膜形貌、结构、光学及电学性能的影响。实验结果表明所制备的ZnO∶Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。沉积压强对ZnO∶Zr薄膜的晶化程度、形貌、生长速率和电阻率影响很大,而对其光学性能如透光率、光学带隙及折射率影响不大。当沉积压强为2 Pa时,ZnO∶Zr薄膜的电阻率达到最小值2.0×10-3Ω·cm,其可见光平均透过率和平均折射率分别为83.2%和1.97。
张化福类成新刘汉法袁长坤
关键词:直流反应磁控溅射透明导电薄膜
Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films被引量:1
2010年
Mn-W co-doped ZnO(ZMWO) thin films with low resistivity and high transparency were successfully prepared on glass substrate by direct current(DC) magnetron sputtering at low temperature.The sputtering power was varied from 65 to 150 W.The crystallinity and resistivity of ZMWO films greatly depend on sputtering power while the optical transmittance and optical band gap are not sensitive to sputtering power.All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.Considering the crystallinity and the electrical and optical properties,we suggest that the optimal sputtering power in this experiment is 90 W and,at this power,the ZMWO film has the lowest resistivity of 9.8×10^(-4)Ω.cm with a high transmittance of approximately 89%in the visible range.
张化福刘汉法类成新周爱萍袁长坤
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