Raman spectra of undoped GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition on sapphire are investigated between 78 and 573K.A peak at 247cm -1 is observed in both Raman spectra of GaN and Mg-doped GaN.It is suggested that the defect-induced scattering is origin of the mode.The electronic Raman scattering mechanism and Mg-related local vibrational mode are excluded.Furthermore,the differences of E_2 and A_1(LO) modes in two samples are also discussed.The stress relaxation is observed in Mg-doped GaN.
This paper reports that pure hexagonal aluminium nitride microtubes and nanowires growing along the [0001] direction have been successfully synthesized by directly reacting AlCl3 with NaN3 at low temperature （450℃） under condition of non-solvent system. The grey-white powder of reacting product was characterized by high-resolution transmission electron microscope （HRTEM）, which shows that the powder is long straight-wire morphology with outer diameter from 40nm to 300 nm and length up to several micrometres. The results of both electron diffraction （ED） and x-ray diffraction （XRD） indicate that the AlN microtubes have a pure hexagonal monocrystal tubular structure with the combination of the curled AlN nanobelts. Room-temperature photoluminescence spectrum of the synthesized sample showed an emission peak, which is closely related to the small size of the microtubes.
