Single crystal of Lu2Si2OT：Pr was grown by Czochralski method. Transmittance, photoluminescence excitation （PLE） and photo- luminescence （PL） spectra, X-ray excited luminescence （XEL） and fluorescence decay time spectra of the sample were measured and dis- cussed to investigate its optical characteristics. The crystal structure of the as grown Lu2Si207：Pr was confirmed to be C2/m. There was a broad absorption peaking at 245 um in the region from 200-260 urn. The PL spectntm was dominated by fast 3py^3Hj band peaking at 524 nm. The XEL spectrum was dominated by the fast 5d14t^---~41e emission peaking at 265 nm. The 2D （temperature-intensity） and 3D （tem- perature-wavelength-intensity） thermally stimulated luminescence （TSL） spectra were measured. The Pr3＋ ion was found to be the recombina- tion center during the TSL process. Three obvious traps were detected in LPS：Pr single crystal with energy depth at 1.06, 0.78 and 0.67 eV.
