High-strain InGaAs/GaAs quantum wells(QWs) are grown by low-pressure metal-organic chemical vapor deposition(LP-MOCVD). Photoluminescence(PL) at room temperature is applied for evaluation of the optical property. The influence of growth temperature,V/III ratio,and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum(FWHM) of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV,which grows at 600 °C with V/III ratio of 42.7 and growth rate of 0.96 mm/h.
