Using Geant4 Monte Carlo code and Technology Computer-Aided Design(TCAD) simulation,energy deposition and charge collection of single event effects(SEE) are studied,which are induced by low-energy protons and α particles in small feature size devices.We analyzed charge collection of SEE especially at Bragg's peak and obtained two types of deposited energy distributions of protons and α particles at different incident energies.The two components of the total charge collected are quantified,which are due to drift current of the space charge region and current in the funnel region separately.Results explain the high soft error rate in experiments of low energy proton.
LIU ZhengCHEN ShuMingLIANG BinLIU BiWeiZHAO ZhenYu
Using three-dimensional technology computer-aided design （TCAD） simulation, parasitic bipolar amplification in a single event transient （SET） current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both ]30-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor.
