We present a model which is used to study ion transport in capacitively coupled plasma （CCP） discharge driven by a radio-frequency （rf） source for an etching process. The model combines a collisional sheath model with a trench model. The sheath model can calculate the ion energy distributions （IEDs） and ion angular distributions （IADs） to specify the initial conditions of the ions incident into the trench domain （a simulation area near and in the trench）. Then, considering the charging effect on the photoresist sidewalls and the rf-bias applied to the substrate, the electric potentials in the trench domain are computed by solving the Laplace equation. Finally, the trajectories, IEDs and IADs of ions impacting on the bottom of the trench are obtained using the trench model. Numerical results show that as the pressure increases, ions tend to strike the trench bottom with smaller impact energies and larger incident angles due to the collision processes, and the existence of the trench has distinct influences on the shape of the IEDs and IADs. In addition, as the bias amplitude increases, heights of both peaks decrease and the IEDs spread to a higher energy region.
We have developed a plasma etching simulator to investigate the evolution of pattern profiles in SiO2 material under different plasma conditions. This model focuses on energy and angular dependent etching yield （physical sputtering in this paper）, neutral and ion angular distributions, and reflection of ions or neutrals on the surface of a photoresist or SiO2. The effect of positive charge accumulation on the surface of insulated mask or SiO2 is studied and the charge accumulation contributes to a deflection of ion trajectory. The wafer profile evolution has been simulated using a cellular-automata-like method under radio-frequency （RF） bias and direct-current （DC） bias, respectively. On the basis of the critical role of angular distribution of ions or neutrals, the wafer profile evolution has been simulated for different variances of angles. Observed microtrenching has been well reproduced in the simulator. The ratio of neutrals to ions has been considered and the result shows that because the neutrals are not accelerated by an electric field, their energy is much lower compared with ions, so they are easily reflected on the surface of SiO2, which makes the trench shallower.
Changes of the electron dynamics in hydrogen （H2） radio-frequency （RF） inductively coupled plasmas are investigated using a hairpin probe and an intensified charged coupled device （ICCD）. The electron density, plasma emission intensity, and input current （voltage） are measured during the E to H mode transitions at different pressures. It is found that the electron density, plasma emission intensity, and input current jump up discontinuously, and the input voltage jumps down at the E to H mode transition points. And the threshold power of the E to H mode transition decreases with the increase of the pressure. Moreover, space and phase resolved optical emission spectroscopic measurements reveal that, in the E mode, the RF dynamics is characterized by one dominant excitation per RF cycle, while in the H mode, there are two excitation maxima within one cycle.
A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E （capacitive discharge） to H （inductive discharge） mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial （2D an asymmetric profile in the E mode. Moreover, the at high pressure, but increase almost continuously at image） profile is symmetrical in the H mode, but the 2D image is electron density and emission intensity jump up discontinuously the E to H mode transition under low pressure.
The inflexion point of electron density and effective electron temperature curves versus radio-frequency （RF） bias voltage is observed in the H mode of inductively coupled plasmas （ICPs）. The electron energy probability function （EEPF） evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is： bias- induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.
Ion＇s behavior plays an important role in plasma etching processes and is determined by the local electric potential in the etched trenches. In this study, with the trench powered by a radio frequency （rf） source, the Laplace equation is solved to obtain the electric potential. The ion trajectories and the ion energy distribution （IED） at the bottom of the trench are obtained self-consistently by tracking the ions in the trench. The results show that the aspect ratio of depth- to-width of the photoresist trench and the voltage amplitude of the rf source applied to the electrode are important parameters. The larger the aspect ratio and the smaller the amplitude are, the more ions hit the sidewalls, which results in a notching phenomenon. Meanwhile, there are a higher high-energy peak and a lower low-energy peak in the IED with the increase in aspect ratio.
