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国家自然科学基金(60837001)

作品数:37 被引量:75H指数:4
相关作者:陈松岩李成赖虹凯何国荣郑婉华更多>>
相关机构:中国科学院厦门大学深圳信息职业技术学院更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>
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37 条 记 录,以下是 1-10
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Optimization of the emitter region and the metal grid of a concentrator silicon solar cell被引量:2
2013年
The optimizations of the emitter region and the metal grid of a concentrator silicon solar cell are il- lustrated. The optimizations are done under 1 sun, 100 suns and 200 suns using the 2D numerical simulation tool TCAD software. The optimum finger spacing and its range decrease with the increase in sheet resistance and con- centration ratio. The processes of the diffusion and oxidization in the manufacture flow of the silicon solar cells were simulated to get a series of typical emitter dopant profiles to optimize. The efficiency of the solar cell under 100 suns and 200 suns increased with the decrease in diffusion temperature and the increase in oxidation tempera- ture and time when the diffusion temperature is lower than or equal to 865 ℃. The effect of sheet resistance of the emitter on series resistance and the conversion efficiency of the solar cell under concentration was discussed.
邢宇鹏韩培德范玉杰王帅梁鹏叶舟胡少旭李辛毅娄世殊赵春华米艳红
关键词:CONCENTRATOR
16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides被引量:2
2011年
A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed. The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB. The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate. The demultiplexing characteristics are observed with crosstalk of 5-8 dB, central channel's insertion loss of 2.2 dB, flee spectral range of 24.7 nm and average channel spacing of 1.475 nm. The cause of the spectral distortion is analyzed specifically.
赵雷安俊明张家顺宋世娇吴远大胡雄伟
30-GHz millimeter-wave carrier generation with single sideband modulation based on stimulated Brillouin scattering被引量:1
2011年
A new technique to generate a millimeter(mm)-wave carrier of 32.57 GHz(f_(LO)=10.85 GHz) with single sideband modulation(SSB) for radio-over-fiber(RoF) systems is experimentally demonstrated by using stimulated Brillouin scattering(SBS).The SSB is realized by directly amplifying the +3rd sideband of the modulated optical carrier in the process of SBS.The pump wave is provided through a double Brillouin scattering frequency shifting configuration.The use of the same laser source to generate the pump wave ensures the stability of the mm-wave generation system since the relative frequency shift between them can be eliminated.In addition, the mm-wave carrier obtains an RF power gain of 21 dB with the SBS amplification and a 3-dB bandwidth of 10kHz.
罗振敖谢亮漆晓琼王辉
关键词:RADIO-OVER-FIBER
一种热光可调谐级联微环滤波器的理论分析被引量:11
2012年
根据Vernier效应可大幅度提高滤波器自由光谱范围和调谐范围,设计了一种热光可调谐级联微环滤波器.利用传输矩阵方法和有限元方法从理论上计算了对于第一级微环半径为48μm,第二级半径为50μm的级联微环滤波器的自由光谱范围和调谐范围可以达到75.6 nm,而功耗仅为103.1 mW,这是目前为止我们所知的基于微环谐振腔的硅基热光可调谐滤波器中最大的自由光谱范围和在如此低功耗下最大的调谐范围.利用有限元方法,还计算了半径为50μm微环的热光调谐响应时间,上升沿时间为3.5μs,下降沿时间仅为0.8μs.
任光辉陈少武曹彤彤
关键词:热光效应
Si纳米线阵列波导光栅制备被引量:4
2010年
采用绝缘层上Si(SOI)材料设计制备了3×5纳米线阵列波导光栅(AWG),器件大小为110μm×100μm。利用简单传输法模拟了器件的传输谱,并采用二维时域有限差分(FDTD)模拟中心通道输出光场的稳态分布,模拟结果表明,器件的通道间隔为11 nm,通道间的串扰为18 dB。通过电子束曝光(EBL)和感应耦合等离子(ICP)刻蚀制备了所设计的器件,光输出谱测试分析表明,器件中心通道的片上损耗为9 dB,通道间隔为8.36~10.40 nm,中心输出通道的串扰为6 dB。在误差允许范围内,设计和测试的结果一致。
张家顺安俊明赵雷宋世娇吴远大胡雄伟
Si基Ge波导光电探测器的制备和特性研究被引量:10
2009年
以外延Ge薄膜为吸收区,在Si基上制备了Ge波导光电探测器。利用超高真空化学汽相淀积(UHV/CVD)设备,采取低温高温两步法,在Si(100)衬底上外延出厚度约为500nm的高质量纯Ge层。探测器采用脊型波导结构,Al电极分别制作在波导的台面上下形成背对背肖特基结。I-V特性测试表明,在-1V偏压下,暗电流密度为0.2mA/cm2。由于Si与Ge热失配引起外延的Ge薄膜受到0.2%张应变,减小了Ge带隙,光响应波长范围扩展到1.60μm以上。在70mW、1.55μm入射光照射下,测得光电流比暗电流高出近1个数量级。
陈荔群周志文李成赖虹凯陈松岩
关键词:波导光电探测器
Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics
2013年
Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO? for improving their tensile strain and simulate the strain profiles by using the finite difference time domain (FDTD) method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.
卢卫芳李成黄诗浩林光杨王尘严光明黄巍赖虹凯陈松岩
关键词:FDTD
Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by 2D numerical simulation
2013年
The silicon vertical multi-junction (VMJ) solar cell has a good potential in high concentration, but it requires high quality front and back surface passivation layers to keep its high efficiency. We try to add dopants into the front and back surfaces of the VMJ cell to release this strict requirement in this work. The effects of recombination velocities, doping types and doping pro- files of front and back surfaces on the performance of the P-type VMJ cell were calculated under 1 sun and 1000 suns. The 2D numerical simulation tool TCAD software was used. The performance of the VMJ cell without front and back surface dopants was also calculated for comparison. It was found that the requirement of high quality front and back surface passivation layers could be released remarkably by adding either N-type or W-type front and back surface dopants. For the two types of front surface dopants, the highest efficiencies of the cells were got by light dopant; for the two types of back surface dopants, the doping type and profile affected little on the performance of the cell in our calculation range. It was also found that the series resistance of the VMJ cell with N-type front surface dopant was decreased by the 2D effect of front surface emitter. The VMJ cell with W-type front surface dopant had the highest efficiency under 1000 suns and the VMJ cell with N-type front surface dopant had the highest efficiency under 1 sun in our calculation range.
XING YuPengHAN PeiDeWANG ShuaiLIANG PengLOU ShiShuZHANG YuanBoHU ShaoXuZHU HuiShiMI YanHongZHAO ChunHua
关键词:CONCENTRATION
高功率980nm垂直腔面发射激光器的温度特性被引量:7
2010年
应变补偿量子阱结构因带宽大、增益高和波长漂移速度低等特点而成为近年来研究的热点。首次介绍了国内980nm高功率InGaAs/GaAsP应变补偿量子阱结构的垂直腔面发射激光器(VCSEL)的变温实验,测得脉冲条件下600μm直径的器件在10~100℃温度范围内发射波长漂移速度为0.05nm/K,阈值电流随温度变化呈现先缓慢下降后迅速上升的特性。结合VCSEL反射谱、PL谱和增益峰值波长漂移速度,对器件阈值电流特性进行了合理的分析和解释。连续工作状态下,测试得到器件峰值功率为1W,根据波长与耗散功率的实验曲线及热阻计算公式,可估算出垂直腔面发射激光器热阻值为10K/W。
何国荣沈文娟王青郑婉华陈良惠
关键词:垂直腔面发射激光器高功率
硅基低位错密度厚锗外延层的UHV/CVD法生长被引量:4
2012年
利用超高真空化学气相淀积系统,基于低温缓冲层和插入应变超晶格的方法,在Si(100)衬底上外延出厚度约为880nm的纯Ge层.采用X射线双晶衍射、高分辨透射电镜、原子力显微镜和光致发光谱分别表征了其结构及光学性质.测试结果显示外延Ge的X射线双晶衍射曲线半高宽为273″,表面均方根粗糙度为0.24 nm,位错密度约为1.5×10~6cm^2.在室温下观测到外延Ge的直接带跃迁光致发光,发光峰值位于1540 nm.表明生长的Si基Ge材料具有良好的结晶质量,可望在Si基光电子器件中得到应用.
陈城钊郑元宇黄诗浩李成赖虹凯陈松岩
关键词:UHV/CVD光致发光谱
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