为研究深亚微米尺度下应变 Si Ge沟改进 PMOSFET器件性能的有效性 ,运用二维数值模拟程序MEDICI模拟和分析了 0 .1 8μm有效沟长 Si Ge PMOS及 Si PMOS器件特性。Si Ge PMOS垂直方向采用 Si/Si Ge/Si结构 ,横向结构同常规 PMOS,N+ -poly栅结合 P型δ掺杂层获得了合理阈值电压及空穴局域化。研究表明 ,经适当设计的 Si Ge PMOS比对应 Si PMOS的 IDmax、gm、f T均提高 1 0 0 %以上 ,表明深亚微米尺度 Si
Device structure and fabrication process of SOI nMOSFET depleted partially are p roposed for multi-gigahertz RF applications.Many advanced techniques for deep submiron MOSFETs are incorporated into the proposed device.Main steps and condit ions in process are given in details,with simulation and optimization by using t he process simulator,Tsuprem4.Experiment results of 0.25μm SOI RF nMOSFET are i n consistence with simulated ones,and excellent or acceptable parameters of devi ce performance are obtained for multi-gigahertz RF applications.
